{ "dc.contributor.author": "Roura Grabulosa, Pere" , "dc.contributor.author": "Taïr, Fadila" , "dc.contributor.author": "Farjas Silva, Jordi" , "dc.contributor.author": "Roca i Cabarrocas, Pere" , "dc.date.accessioned": "2013-11-12T15:43:37Z" , "dc.date.available": "2013-11-12T15:43:37Z" , "dc.date.issued": "2013" , "dc.identifier.issn": "0021-8979 (versió paper)" , "dc.identifier.issn": "1089-7550 (versió electrònica)" , "dc.identifier.uri": "http://hdl.handle.net/10256/8571" , "dc.description.abstract": "The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100–900K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted" , "dc.format.mimetype": "application/pdf" , "dc.language.iso": "eng" , "dc.publisher": "American Institute of Physics" , "dc.relation.isformatof": "Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.4803888" , "dc.relation.ispartof": "© Journal of Applied Physics, 2013, vol. 113, p. 173515" , "dc.relation.ispartofseries": "Articles publicats (D-F)" , "dc.rights": "Tots els drets reservats" , "dc.subject": "Semiconductors amorfs" , "dc.subject": "Amorphous semiconductors" , "dc.subject": "Termodinàmica" , "dc.subject": "Thermodynamic" , "dc.title": "Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon" , "dc.type": "info:eu-repo/semantics/article" , "dc.rights.accessRights": "info:eu-repo/semantics/openAccess" , "dc.embargo.terms": "Cap" , "dc.type.version": "info:eu-repo/semantics/publishedVersion" , "dc.identifier.doi": "http://dx.doi.org/10.1063/1.4803888" , "dc.identifier.idgrec": "017612" }