Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
dc.contributor.author
dc.date.accessioned
2011-02-07T11:55:48Z
dc.date.available
2010-12-14T10:36:10Z
2011-02-07T11:55:48Z
dc.date.issued
2008
dc.identifier.citation
Roura, P., Farjas, J., i Roca i Cabarrocas, P. (2008). Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon. Journal of Applied Physics, 104 (7), 73521. Recuperat 7 febrer 2011 0, a http://link.aip.org/link/doi/10.1063/1.2990767
dc.identifier.issn
0021-8979
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dc.description.abstract
A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si
dc.format.mimetype
application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
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Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2990767
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© Journal of Applied Physics, 2008, vol. 104, núm. 7
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Articles publicats (D-F)
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Tots els drets reservats
dc.subject
dc.title
Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
dc.type
info:eu-repo/semantics/article
dc.rights.accessRights
info:eu-repo/semantics/openAccess
dc.identifier.doi
dc.identifier.idgrec
010684
dc.identifier.eissn
1089-7550