DUGiDocsDetermination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
dc.contributor.author
dc.date.accessioned
2010-09-28T09:08:21Z
dc.date.available
2010-08-10T08:51:09Z
2010-09-28T09:08:21Z
dc.date.issued
1997-05
dc.identifier.citation
Roura, P., López-de Miguel, M., Cornet, A., i Morante, J. R. (1997). Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy. Journal of Applied Physics, 81 (10), 6916 - 6920. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i10/p6916_s1
dc.identifier.issn
0021-8979
dc.identifier.uri
dc.description.abstract
A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV
dc.format.mimetype
application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
dc.relation.isformatof
Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365253
dc.relation.ispartof
© Journal of Applied Physics, 1997, vol. 81, núm. 10, p. 6916-6920
dc.relation.ispartofseries
Articles publicats (D-F)
dc.rights
Tots els drets reservats
dc.subject
dc.title
Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
dc.type
info:eu-repo/semantics/article
dc.rights.accessRights
info:eu-repo/semantics/openAccess
dc.identifier.doi
dc.identifier.idgrec
003685