DUGiDocsRelaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
dc.contributor.author
dc.date.accessioned
2011-03-23T12:12:54Z
dc.date.available
2010-12-14T10:36:04Z
2011-03-23T12:12:54Z
dc.date.issued
2010
dc.identifier.citation
Kail, F., Farjas, J., Roura, P., Secouard, C., Nos, O., Bertomeu, J., Alzina, F., i Roca I Cabarrocas, P. (2010). Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments. Applied Physics Letters, 97 (3), 031918. Recuperat 23 març 2011, a http://link.aip.org/link/doi/10.1063/1.3464961
dc.identifier.issn
0021-9606
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dc.description.abstract
The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon
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application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
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Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.3464961
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© Applied Physics Letters, 2010, vol. 97, núm. 3, p. 244308
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Articles publicats (D-F)
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Tots els drets reservats
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dc.title
Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
dc.type
info:eu-repo/semantics/article
dc.rights.accessRights
info:eu-repo/semantics/openAccess
dc.type.version
info:eu-repo/semantics/publishedVersion
dc.identifier.doi
dc.identifier.idgrec
012668
dc.identifier.eissn
1089-7690