DUGiDocsSi3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation
dc.contributor.author
dc.date.accessioned
2011-01-28T11:18:56Z
dc.date.available
2010-12-14T10:35:45Z
2011-01-28T11:18:56Z
dc.date.issued
2005
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Farjas Silva, J., Rath, Ch., Pinyol i Agelet, A., Roura i Grabulosa, P., i Bertran, E. (2005). Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation. Applied Physics Letters, 87 (19), 192114. Recuperat 28 setembre 2010, a http://apl.aip.org/resource/1/applab/v87/i19/p192114_s1
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0003-6951
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dc.description.abstract
A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions
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application/pdf
dc.language.iso
eng
dc.publisher
American Institute of Physics
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Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2130380
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© Applied Physics Letters, 2005, vol. 87, núm. 19
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Articles publicats (D-F)
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Tots els drets reservats
dc.subject
dc.title
Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation
dc.type
info:eu-repo/semantics/article
dc.rights.accessRights
info:eu-repo/semantics/openAccess
dc.identifier.doi
dc.identifier.idgrec
003722
dc.identifier.eissn
1077-3118