Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

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dc.contributor.author Roura Grabulosa, Pere
dc.contributor.author Vilà Arbonés, Anna
dc.contributor.author Bosch, J.
dc.contributor.author López-de Miguel, Manel
dc.contributor.author Cornet i Calveras, Albert
dc.contributor.author Morante i Lleonart, Joan R.
dc.contributor.author Westwood, D. I.
dc.date.issued 1997-08
dc.identifier.citation Roura, P., Vila, A., Bosch, J., Lopez, M., Cornet, A., Morante, J. R., et al. (1997). Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers. Journal of Applied Physics, 82 (3), 1147 - 1152. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v82/i3/p1147_s1
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10256/3049
dc.description.abstract The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05<x<0.8). On the other hand, in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain
dc.format.mimetype application/pdf
dc.language.iso eng
dc.publisher American Institute of Physics
dc.relation.isformatof Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365881
dc.relation.ispartof © Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152
dc.relation.ispartofseries Articles publicats (D-F)
dc.rights Tots els drets reservats
dc.subject Gal·li
dc.subject Compostos d'indi
dc.subject Espectres d'absorció
dc.subject Semiconductors
dc.subject Absorption spectra
dc.subject Gallium
dc.subject Indium compounds
dc.title Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
dc.type info:eu-repo/semantics/article
dc.identifier.doi http://dx.doi.org/10.1063/1.365881


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