Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

DSpace/Manakin Repository

Show simple item record Roura Grabulosa, Pere Vilà Arbonés, Anna Bosch, J. López-de Miguel, Manel Cornet i Calveras, Albert Morante i Lleonart, Joan R. Westwood, D. I. 1997
dc.identifier.citation Roura, P., Vila, A., Bosch, J., Lopez, M., Cornet, A., Morante, J. R., et al. (1997). Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers. Journal of Applied Physics, 82 (3), 1147 - 1152. Recuperat 28 setembre 2010, a
dc.identifier.issn 0021-8979
dc.description.abstract The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05<x<0.8). On the other hand, in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain
dc.format.mimetype application/pdf
dc.language.iso eng
dc.publisher American Institute of Physics
dc.relation.isformatof Reproducció digital del document publicat a:
dc.relation.ispartof © Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152
dc.relation.ispartofseries Articles publicats (D-F)
dc.rights Tots els drets reservats
dc.subject Gal·li
dc.subject Compostos d'indi
dc.subject Espectres d'absorció
dc.subject Semiconductors
dc.subject Absorption spectra
dc.subject Gallium
dc.subject Indium compounds
dc.title Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
dc.type info:eu-repo/semantics/article

Files in this item


Show simple item record

Related Items

Search DUGiDocs


My Account


views icon 1125 downloads icon 769


This file is restricted

The file you are attempting to access is a restricted file and requires credentials to view. Please login below to access the file.

  1. We will contact you via the email address you have provided us.

Request a copy

When filling up the form you are requesting to the author or main author a copy of his/her article, which is stored in the institutional repository (DUGiDocs). Author decides himself/herlself whether it is appropiate to deliver a copy of the document to the requester or nott. In any case, the Library of the UdG doesn't participate in the process, as it isn't allowed to deliver any restricted articles.